测试周期:
2-3个月,提供全面的认证计划、测试等服务
产品范围:
适用于MOSFET,Diode,IGBT,第三代半导体器件等元件构成的功率模块。
测试项目:
序号 | 测试项目 | 缩写 | 样品数/批 | 测试方法 |
1 | Thermal shock test | TST | 6 | IEC 60749-25 |
2 | Vibration | V | 6 | DIN EN 60068-2-6 |
3 | Mechanical shock | MS | 6 | DIN EN 60068-2-27 |
4 | Power cycling | PCsec | 6 | IEC 60749-34 |
5 | Power cycle | PCmin | 6 | IEC 60749-34 |
6 | High-temperature storage | HTS | 6 | IEC 60749-6 |
7 | Low-temperature storage | LTS | 6 | JEDEC JESD-22 A119 |
8 | High-temperature reverse bias | HTRB | 6 | IEC 60747-9 |
9 | High-temperature gate bias | HTGB | 6 | IEC 60747-9 |
10 | High-humidity, high-temperature reverse bias | H3TRB | 6 | IEC 60749-5 |
11 | Determining parasitic stray inductance | Lp | 6 | IEC 60747-15 |
12 | Determining thermal resistance | Rth | 6 | DIN EN 60747-15 |
13 | Determining short-circuit capability | / | 6 | / |
14 | Insulation test | / | 6 | / |
15 | Determining mechanical data | / | 6 | / |